NCEP01T10G Datasheet and Replacement
Type Designator: NCEP01T10G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 140
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 105
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 58
nS
Cossⓘ -
Output Capacitance: 790
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007
Ohm
Package:
DFN5X6-8L
-
MOSFET ⓘ Cross-Reference Search
NCEP01T10G Datasheet (PDF)
..1. Size:340K ncepower
ncep01t10g.pdf 
http://www.ncepower.com NCEP01T10GNCE N-Channel Super Trench Power MOSFET Description The NCEP01T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
6.1. Size:348K ncepower
ncep01t13.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.2. Size:283K ncepower
ncep01t11d.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T11DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.3. Size:321K ncepower
ncep01t13ad.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13ADNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13AD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.4. Size:323K ncepower
ncep01t18d.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T18DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.5. Size:317K ncepower
ncep01t11.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T11NCE N-Channel Super Trench Power MOSFET Description The NCEP01T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.6. Size:343K ncepower
ncep01t13a.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13ANCE N-Channel Super Trench Power MOSFET Description The NCEP01T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.7. Size:325K ncepower
ncep01t12d.pdf
http://www.ncepower.com NCEP01T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
6.8. Size:345K ncepower
ncep01t18.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T18NCE N-Channel Super Trench Power MOSFET Description The NCEP01T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.9. Size:323K ncepower
ncep01t13bd.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13BDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13BD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.10. Size:343K ncepower
ncep01t13b.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13BNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13B uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.11. Size:345K ncepower
ncep01t15.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T15NCE N-Channel Super Trench Power MOSFET Description The NCEP01T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.12. Size:317K ncepower
ncep01t13d.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T13DNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
6.13. Size:347K ncepower
ncep01t12.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T12NCE N-Channel Super Trench Power MOSFET Description The NCEP01T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
6.14. Size:396K ncepower
ncep01t18vd.pdf
http://www.ncepower.com NCEP01T18VDNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
6.15. Size:363K ncepower
ncep01t13ll.pdf
http://www.ncepower.com NCEP01T13LLNCE N-Channel Super Trench Power MOSFET Description The NCEP01T13LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =160A frequency switching performance. Both conduction and RDS(ON)=3.3m , typical@ VGS=10V switching power losses are minimized due to an extremely l
6.16. Size:323K ncepower
ncep01t18t.pdf
Pb Free Producthttp://www.ncepower.com NCEP01T18TNCE N-Channel Super Trench Power MOSFET Description The NCEP01T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
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History: 2SK3923-01
| 2SK2883K
| CS2N60U
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