All MOSFET. NCEP020N30BQU Datasheet

 

NCEP020N30BQU MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP020N30BQU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 65 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30.4 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 928 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0023 Ohm
   Package: DFN3.3X3.3-8L

 NCEP020N30BQU Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP020N30BQU Datasheet (PDF)

 ..1. Size:510K  ncepower
 ncep020n30bqu.pdf

NCEP020N30BQU NCEP020N30BQU

http://www.ncepower.com NCEP3065BQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP3065BQU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc

 4.1. Size:809K  ncepower
 ncep020n30qu.pdf

NCEP020N30BQU NCEP020N30BQU

http://www.ncepower.com NCEP020N30QUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =30V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =1.75m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =3.0m (typical) @ V =4.5V

 4.2. Size:359K  ncepower
 ncep020n30gu.pdf

NCEP020N30BQU NCEP020N30BQU

http://www.ncepower.com NCEP020N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.75m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.0m (typical) @

 6.1. Size:685K  ncepower
 ncep020n60agu.pdf

NCEP020N30BQU NCEP020N30BQU

NCEP020N60AGUhttp://www.ncepower.comNCE N-Channel Super Trench II Power MOSFETGeneral FeaturesDescription V =60V,I =180ADS DThe NCEP020N60AGU uses Super Trench II technology thatR =1.8 m (typical) @ V =10VDS(ON) GSis uniquely optimized to provide the most efficient highR =2.5 m (typical) @ V =4.5VDS(ON) GSfrequency switching performance. Both conduction and

 6.2. Size:966K  ncepower
 ncep020n10ll.pdf

NCEP020N30BQU NCEP020N30BQU

NCEP020N10LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =330ADS Dswitching performance. Both conduction and switching power R =1.5m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat

 6.3. Size:410K  ncepower
 ncep020n85d.pdf

NCEP020N30BQU NCEP020N30BQU

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 6.4. Size:795K  ncepower
 ncep020n85ll.pdf

NCEP020N30BQU NCEP020N30BQU

http://www.ncepower.com NCEP020N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =85V,I =295ADS Dswitching performance. Both conduction and switching powerR =1.6m , typical @ V =10VDS(ON) GSlosses are minimized due to a

 6.5. Size:410K  ncepower
 ncep020n85.pdf

NCEP020N30BQU NCEP020N30BQU

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 6.6. Size:410K  ncepower
 ncep020n85 ncep020n85d.pdf

NCEP020N30BQU NCEP020N30BQU

NCEP020N85, NCEP020N85DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext

 6.7. Size:399K  ncepower
 ncep020n85t.pdf

NCEP020N30BQU NCEP020N30BQU

NCEP020N85TNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =320A switching performance. Both conduction and switching power RDS(ON)=1.6m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 6.8. Size:678K  ncepower
 ncep020n60gu.pdf

NCEP020N30BQU NCEP020N30BQU

http://www.ncepower.com NCEP020N60GUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP020N60GU uses Super Trench II technology that is V =60V,I =180ADS Duniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BLL1214-250R

 

 
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