NCEP020N30QU Datasheet. Specs and Replacement
Type Designator: NCEP020N30QU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 1700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: DFN3.3X3.3-8L
NCEP020N30QU substitution
- MOSFET ⓘ Cross-Reference Search
NCEP020N30QU datasheet
ncep020n30qu.pdf
http //www.ncepower.com NCEP020N30QU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =30V,I =70A DS D uniquely optimized to provide the most efficient high frequency R =1.75m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.0m (typical) @ V =4.5V... See More ⇒
ncep020n30bqu.pdf
http //www.ncepower.com NCEP3065BQU NCE N-Channel Super Trench Power MOSFET Description The NCEP3065BQU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc... See More ⇒
ncep020n30gu.pdf
http //www.ncepower.com NCEP020N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.75m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=3.0m (typical) @... See More ⇒
ncep020n60agu.pdf
NCEP020N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =180A DS D The NCEP020N60AGU uses Super Trench II technology that R =1.8 m (typical) @ V =10V DS(ON) GS is uniquely optimized to provide the most efficient high R =2.5 m (typical) @ V =4.5V DS(ON) GS frequency switching performance. Both conduction and ... See More ⇒
Detailed specifications: NCEP01T13LL, NCEP01T18D, NCEP01T18VD, NCEP01T25LL, NCEP01T25T, NCEP01T30T, NCEP020N10LL, NCEP020N30BQU, STP65NF06, NCEP020N60AGU, NCEP020N60GU, NCEP020N85, NCEP020N85D, NCEP020N85LL, NCEP020N85T, NCEP0210Q, NCEP0212F
Keywords - NCEP020N30QU MOSFET specs
NCEP020N30QU cross reference
NCEP020N30QU equivalent finder
NCEP020N30QU pdf lookup
NCEP020N30QU substitution
NCEP020N30QU replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IPAN60R125PFD7S
🌐 : EN ES РУ
LIST
Last Update
MOSFET: FTF30P35D | FTF25N35DHVT | FTF15N35D | FTE15C35G | FTP02P15G | FTE02P15G | AKF30N5P0SX | AKF30N10S | AKF20P45D | CM4407
Popular searches
40n06 | bc108b | oc84 | c6090 | ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290
