NCEP020N60AGU Datasheet. Specs and Replacement
Type Designator: NCEP020N60AGU
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 205 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: DFN5X6-8L
NCEP020N60AGU substitution
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NCEP020N60AGU datasheet
ncep020n60agu.pdf
NCEP020N60AGU http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET General Features Description V =60V,I =180A DS D The NCEP020N60AGU uses Super Trench II technology that R =1.8 m (typical) @ V =10V DS(ON) GS is uniquely optimized to provide the most efficient high R =2.5 m (typical) @ V =4.5V DS(ON) GS frequency switching performance. Both conduction and ... See More ⇒
ncep020n60gu.pdf
http //www.ncepower.com NCEP020N60GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP020N60GU uses Super Trench II technology that is V =60V,I =180A DS D uniquely optimized to provide the most efficient high frequency R =1.8 m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product... See More ⇒
ncep020n10ll.pdf
NCEP020N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =330A DS D switching performance. Both conduction and switching power R =1.5m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinat... See More ⇒
ncep020n85d.pdf
NCEP020N85, NCEP020N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =300A switching performance. Both conduction and switching power RDS(ON)=1.8m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒
Detailed specifications: NCEP01T18D, NCEP01T18VD, NCEP01T25LL, NCEP01T25T, NCEP01T30T, NCEP020N10LL, NCEP020N30BQU, NCEP020N30QU, IRF1405, NCEP020N60GU, NCEP020N85, NCEP020N85D, NCEP020N85LL, NCEP020N85T, NCEP0210Q, NCEP0212F, NCEP0218G
Keywords - NCEP020N60AGU MOSFET specs
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