NCEP0260 MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP0260
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 285 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 50 nC
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 255 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
Package: TO220
NCEP0260 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP0260 Datasheet (PDF)
ncep0260 ncep0260d.pdf
http://www.ncepower.comNCEP0260,NCEP0260DNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench technology that is V =200V,I =70ADS Duniquely optimized to provide the most efficient high frequencyR =16.5m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x
ncep026n10m.pdf
NCEP026N10M, NCEP026N10MDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an
ncep026n10ll.pdf
NCEP026N10LLNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat
ncep026n85 ncep026n85d.pdf
NCEP026N85,NCEP026N85DNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =240ADS Duniquely optimized to provide the most efficient high frequencyR =2.2m , typical (TO-220)@ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =2.0m , typical (TO-263)@ V =10
ncep026n10t.pdf
NCEP026N10TNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =230ADS Dswitching performance. Both conduction and switching powerR =2.15m , typical@ V =10VDS(ON) GSlosses are minimized due to an extremely low combinat
ncep026n10 ncep026n10d.pdf
NCEP026N10, NCEP026N10DNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =100V,I =200ADS Dswitching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10VDS(ON) GSlosses are minimized due to an ext
ncep026n10f.pdf
NCEP026N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.9m , typical @ VGS=10V losses are minimized due to an extremely low combinat
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
