NCEP026N10T MOSFET Datasheet: N-Ch, 100V, 230A. Full specification with pinout and replacement list

NCEP026N10T Specs and Replacement

   Type Designator: NCEP026N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 230 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0026 Ohm
   Package: TO-247

NCEP026N10T substitution

- MOSFET ⓘ Cross-Reference Search

NCEP026N10T datasheet

..1. Size:1504K ncepower
ncep026n10t.pdf pdf_icon

NCEP026N10T NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =230A DS D switching performance. Both conduction and switching power R =2.15m , typical@ V =10V DS(ON) GS losses are minimized due to an extremely low combinat... See More ⇒

4.1. Size:352K ncepower
ncep026n10m.pdf pdf_icon

NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ... See More ⇒

4.2. Size:683K ncepower
ncep026n10d.pdf pdf_icon

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext... See More ⇒

4.3. Size:302K ncepower
ncep026n10ll.pdf pdf_icon

NCEP026N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat... See More ⇒