NCEP02T10T Datasheet. Specs and Replacement

Type Designator: NCEP02T10T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 425 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO-247

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NCEP02T10T datasheet

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NCEP02T10T

http //www.ncepower.com NCEP02T10T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch... See More ⇒

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NCEP02T10T

Pb Free Product http //www.ncepower.com NCEP02T10D NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

 5.2. Size:750K  ncepower
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NCEP02T10T

http //www.ncepower.com NCEP02T10 NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchin... See More ⇒

 5.3. Size:790K  ncepower
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NCEP02T10T

http //www.ncepower.com NCEP02T10LL NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =200V,I =100A DS D uniquely optimized to provide the most efficient high frequency R =9.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product... See More ⇒

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Detailed specifications: NCEP026N85, NCEP026N85D, NCEP028N12LL, NCEP028N60AGU, NCEP029N10, NCEP029N10D, NCEP02T10, NCEP02T10LL, IRFP064N, NCEP02T11D, NCEP02T11T, NCEP030N12, NCEP030N12D, NCEP030N30GU, NCEP030N60AGU, NCEP030N85GU, NCEP030N85LL

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