NCEP02T10T Specs and Replacement
Type Designator: NCEP02T10T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 425 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO-247
NCEP02T10T substitution
NCEP02T10T datasheet
ncep02t10t.pdf
http //www.ncepower.com NCEP02T10T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch... See More ⇒
ncep02t10d.pdf
Pb Free Product http //www.ncepower.com NCEP02T10D NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep02t10.pdf
http //www.ncepower.com NCEP02T10 NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switchin... See More ⇒
ncep02t10ll.pdf
http //www.ncepower.com NCEP02T10LL NCE N-Channel Super Trench Power MOSFET Description General Features The series of devices uses Super Trench technology that is V =200V,I =100A DS D uniquely optimized to provide the most efficient high frequency R =9.0m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product... See More ⇒
Detailed specifications: NCEP026N85 , NCEP026N85D , NCEP028N12LL , NCEP028N60AGU , NCEP029N10 , NCEP029N10D , NCEP02T10 , NCEP02T10LL , IRF4905 , NCEP02T11D , NCEP02T11T , NCEP030N12 , NCEP030N12D , NCEP030N30GU , NCEP030N60AGU , NCEP030N85GU , NCEP030N85LL .
History: TK17A65U | PJF8NA50 | PJD7NA65 | AOT1608L | NCE65N330D | AGM01P15E | STN4526
Keywords - NCEP02T10T MOSFET specs
NCEP02T10T cross reference
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NCEP02T10T substitution
NCEP02T10T replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: TK17A65U | PJF8NA50 | PJD7NA65 | AOT1608L | NCE65N330D | AGM01P15E | STN4526
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