NCEP02T11D Datasheet. Specs and Replacement

Type Designator: NCEP02T11D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 330 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 450.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO-263

NCEP02T11D substitution

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NCEP02T11D datasheet

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NCEP02T11D

http //www.ncepower.com NCEP02T11D NCE N-Channel Super Trench Power MOSFET Description The NCEP02T11D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Schematic diagram... See More ⇒

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NCEP02T11D

http //www.ncepower.com NCEP02T11T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T11T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒

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NCEP02T11D

http //www.ncepower.com NCEP02T10T NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch... See More ⇒

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NCEP02T11D

Pb Free Product http //www.ncepower.com NCEP02T10D NCE N-Channel Super Trench Power MOSFET Description The NCEP02T10D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒

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Detailed specifications: NCEP026N85D, NCEP028N12LL, NCEP028N60AGU, NCEP029N10, NCEP029N10D, NCEP02T10, NCEP02T10LL, NCEP02T10T, IRLB4132, NCEP02T11T, NCEP030N12, NCEP030N12D, NCEP030N30GU, NCEP030N60AGU, NCEP030N85GU, NCEP030N85LL, NCEP031N85M

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