NCEP035N12 Datasheet. Specs and Replacement
Type Designator: NCEP035N12
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 870 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-220
NCEP035N12 substitution
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NCEP035N12 datasheet
ncep035n12.pdf
NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒
ncep035n12 ncep035n12d.pdf
NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒
ncep035n12vd.pdf
NCEP035N12VD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin... See More ⇒
ncep035n12d.pdf
NCEP035N12,NCEP035N12D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒
Detailed specifications: NCEP030N85GU, NCEP030N85LL, NCEP031N85M, NCEP033N10, NCEP033N10D, NCEP033N10M, NCEP033N85M, NCEP035N10M, AON6380, NCEP035N12D, NCEP035N12VD, NCEP035N60AG, NCEP035N60AK, NCEP035N60K, NCEP035N72, NCEP035N72GU, NCEP035N85
Keywords - NCEP035N12 MOSFET specs
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