NCEP035N12 Datasheet and Replacement
Type Designator: NCEP035N12
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 870 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-220
NCEP035N12 substitution
NCEP035N12 Datasheet (PDF)
ncep035n12.pdf

NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep035n12 ncep035n12d.pdf

NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep035n12vd.pdf

NCEP035N12VDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin
ncep035n12d.pdf

NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
Datasheet: NCEP030N85GU , NCEP030N85LL , NCEP031N85M , NCEP033N10 , NCEP033N10D , NCEP033N10M , NCEP033N85M , NCEP035N10M , IRLZ44N , NCEP035N12D , NCEP035N12VD , NCEP035N60AG , NCEP035N60AK , NCEP035N60K , NCEP035N72 , NCEP035N72GU , NCEP035N85 .
History: WMP18N65EM | NCEP1520K | SIRA72DP | JFPC16N50C | TMA8N60H | IRFR4510TR | TMA20N65HG
Keywords - NCEP035N12 MOSFET datasheet
NCEP035N12 cross reference
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History: WMP18N65EM | NCEP1520K | SIRA72DP | JFPC16N50C | TMA8N60H | IRFR4510TR | TMA20N65HG



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