NCEP035N12D Datasheet and Replacement
Type Designator: NCEP035N12D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 870 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO-263
NCEP035N12D substitution
NCEP035N12D Datasheet (PDF)
ncep035n12d.pdf
NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep035n12 ncep035n12d.pdf
NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep035n12.pdf
NCEP035N12,NCEP035N12DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=3.0m , typical (TO-220)@ VGS=10V losses are minimized due to an ext
ncep035n12vd.pdf
NCEP035N12VDNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =190A switching performance. Both conduction and switching power RDS(ON)=2.5m , typical@ VGS=10V losses are minimized due to an extremely low combin
Datasheet: NCEP030N85LL , NCEP031N85M , NCEP033N10 , NCEP033N10D , NCEP033N10M , NCEP033N85M , NCEP035N10M , NCEP035N12 , AO4407 , NCEP035N12VD , NCEP035N60AG , NCEP035N60AK , NCEP035N60K , NCEP035N72 , NCEP035N72GU , NCEP035N85 , NCEP035N85D .
History: AP4423GM | IRFP22N50A | AUIRLS4030-7P | CRTM025N03L | STS10P4LLF6 | 2SK783 | IRFN450
Keywords - NCEP035N12D MOSFET datasheet
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History: AP4423GM | IRFP22N50A | AUIRLS4030-7P | CRTM025N03L | STS10P4LLF6 | 2SK783 | IRFN450
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