NCEP040N85G Datasheet. Specs and Replacement

Type Designator: NCEP040N85G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 850 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DFN5X6-8L

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NCEP040N85G datasheet

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NCEP040N85G

http //www.ncepower.com NCEP040N85G NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N85G uses Super Trench II technology that is V =85V,I =120A DS D uniquely optimized to provide the most efficient high frequency R =3.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R produc... See More ⇒

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NCEP040N85G

http //www.ncepower.com NCEP040N85GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP040N85GU uses Super Trench II technology that is V =85V,I =125A DS D uniquely optimized to provide the most efficient high frequency R =3.2m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power losses are minimized due to an extrem... See More ⇒

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NCEP040N85G

NCEP040N85, NCEP040N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.5m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an extr... See More ⇒

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NCEP040N85G

Pb Free Product NCEP040N85M NCEP040N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =140A DS D switching performance. Both conduction and switching power R =3.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimi... See More ⇒

Detailed specifications: NCEP035N85D, NCEP036N10MSL, NCEP038N10GU, NCEP039N10F, NCEP040N10GU, NCEP040N10M, NCEP040N12, NCEP040N12D, SI2302, NCEP040N85GU, NCEP040N85M, NCEP040N85MD, NCEP040NH150LL, NCEP045N10AG, NCEP045N10F, NCEP045N10G, NCEP045N10M

Keywords - NCEP040N85G MOSFET specs

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