NCEP048N85 Datasheet. Specs and Replacement

Type Designator: NCEP048N85

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm

Package: TO-220

NCEP048N85 substitution

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NCEP048N85 datasheet

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NCEP048N85

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

 ..2. Size:835K  ncepower
 ncep048n85.pdf pdf_icon

NCEP048N85

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

 0.1. Size:761K  ncepower
 ncep048n85md.pdf pdf_icon

NCEP048N85

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

 0.2. Size:761K  ncepower
 ncep048n85m ncep048n85md.pdf pdf_icon

NCEP048N85

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

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Detailed specifications: NCEP045N10AG, NCEP045N10F, NCEP045N10G, NCEP045N10M, NCEP045N85, NCEP045N85G, NCEP045N85GU, NCEP048N72, IRFB31N20D, NCEP048N85D, NCEP048N85M, NCEP048N85MD, NCEP048NH150, NCEP048NH150D, NCEP048NH150T, NCEP050N10M, NCEP050N10MD

Keywords - NCEP048N85 MOSFET specs

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