NCEP048NH150 PDF and Equivalents Search

http //www.ncepower.com NCEP048NH150 NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =175A DS D uniquely optimized to provide the most efficient high frequency R =3.9m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge ... See More ⇒

http //www.ncepower.com NCEP048NH150D NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =175A DS D uniquely optimized to provide the most efficient high frequency R =3.6m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge... See More ⇒

NCEP048NH150T http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The series of devices uses Super Trench III technology that is V =150V,I =223A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =3.9m , typical @ V =10V DS(ON) GS switching performance. Both conduction and switching power Ex... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

http //www.ncepower.com NCEP048N72 NCE N-Channel Super Trench Power MOSFET Description The NCEP048N72 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switch... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒

NCEP048N85M, NCEP048N85MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =85V,I =120A DS D switching performance. Both conduction and switching power R =4.45m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an e... See More ⇒