NCEP050N85G Datasheet. Specs and Replacement

Type Designator: NCEP050N85G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 635 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: DFN5X6-8L

NCEP050N85G substitution

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NCEP050N85G datasheet

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NCEP050N85G

NCEP050N85G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =100A switching performance. Both conduction and switching power RDS(ON)=4.6m , typical @ VGS=10V losses are minimized due to an extremely low combina... See More ⇒

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NCEP050N85G

NCEP050N85, NCEP050N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =120A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

 4.2. Size:395K  ncepower
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NCEP050N85G

NCEP050N85, NCEP050N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

 4.3. Size:395K  ncepower
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NCEP050N85G

NCEP050N85, NCEP050N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =85V,ID =115A switching performance. Both conduction and switching power RDS(ON)=4.7m , typical (TO-220)@ VGS=10V losses are minimized due to an ext... See More ⇒

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Detailed specifications: NCEP048NH150T, NCEP050N10M, NCEP050N10MD, NCEP050N10MG, NCEP050N12, NCEP050N12AGU, NCEP050N12D, NCEP050N12GU, MMIS60R580P, NCEP050N85M, NCEP053N85GU, NCEP055N10, NCEP055N10D, NCEP055N10G, NCEP055N10M, NCEP055N10U, NCEP055N12

Keywords - NCEP050N85G MOSFET specs

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