NCEP055N10D Datasheet. Specs and Replacement

Type Designator: NCEP055N10D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 61 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm

Package: TO-263

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NCEP055N10D datasheet

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NCEP055N10D

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒

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NCEP055N10D

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒

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NCEP055N10D

NCEP055N10U NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combin... See More ⇒

 4.2. Size:405K  ncepower
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NCEP055N10D

NCEP055N10, NCEP055N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒

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Detailed specifications: NCEP050N12, NCEP050N12AGU, NCEP050N12D, NCEP050N12GU, NCEP050N85G, NCEP050N85M, NCEP053N85GU, NCEP055N10, IRFP064N, NCEP055N10G, NCEP055N10M, NCEP055N10U, NCEP055N12, NCEP055N12AG, NCEP055N12D, NCEP055N12G, NCEP055N30GU

Keywords - NCEP055N10D MOSFET specs

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