FQB55N10 MOSFET Datasheet: N-Ch, 100V, 55A. Full specification with pinout and replacement list

FQB55N10 Specs and Replacement

Type Designator: FQB55N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 155 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm

Package: TO263 D2PAK

FQB55N10 substitution

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FQB55N10 datasheet

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October 2008 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been especia... See More ⇒

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May 2001 TM QFET FQB55N06 / FQI55N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially t... See More ⇒

Detailed specifications: FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 , FQB4N80 , SDD02N60 , FQB50N06 , FQB50N06L , AON6414A , SDD01N70 , FQB5N50C , FQB5N90 , FQB6N80 , FCH104N60FF085 , FQB7N60 , FCPF2250N80Z , FQB7P20 .