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FQB55N10 Specs and Replacement


   Type Designator: FQB55N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO263 D2PAK
 

 FQB55N10 substitution

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FQB55N10 Specs

 ..1. Size:1056K  fairchild semi
 fqb55n10 fqi55n10.pdf pdf_icon

FQB55N10

October 2008 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been especia... See More ⇒

 0.1. Size:1039K  fairchild semi
 fqb55n10tm.pdf pdf_icon

FQB55N10

October 2008 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been especia... See More ⇒

 8.1. Size:602K  fairchild semi
 fqb55n06tm.pdf pdf_icon

FQB55N10

May 2001 TM QFET FQB55N06 / FQI55N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially t... See More ⇒

Detailed specifications: FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 , FQB4N80 , SDD02N60 , FQB50N06 , FQB50N06L , AON6414A , SDD01N70 , FQB5N50C , FQB5N90 , FQB6N80 , FCH104N60FF085 , FQB7N60 , FCPF2250N80Z , FQB7P20 .

History: SM2337PSA

Keywords - FQB55N10 MOSFET specs

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