All MOSFET. FQB55N10 Datasheet

 

FQB55N10 Datasheet and Replacement


   Type Designator: FQB55N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: TO263 D2PAK
 

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FQB55N10 Datasheet (PDF)

 ..1. Size:1056K  fairchild semi
 fqb55n10 fqi55n10.pdf pdf_icon

FQB55N10

October 2008QFETFQB55N10 / FQI55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been especia

 0.1. Size:1039K  fairchild semi
 fqb55n10tm.pdf pdf_icon

FQB55N10

October 2008QFETFQB55N10 / FQI55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been especia

 8.1. Size:602K  fairchild semi
 fqb55n06tm.pdf pdf_icon

FQB55N10

May 2001TMQFETFQB55N06 / FQI55N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 55A, 60V, RDS(on) = 0.020 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 85 pF)This advanced technology has been especially t

Datasheet: FQB34P10TMF085 , FQB44N10 , SDD02N70 , FQB47P06 , FQB4N80 , SDD02N60 , FQB50N06 , FQB50N06L , P55NF06 , SDD01N70 , FQB5N50C , FQB5N90 , FQB6N80 , FCH104N60FF085 , FQB7N60 , FCPF2250N80Z , FQB7P20 .

History: AP10G04DF | AP80P01NF

Keywords - FQB55N10 MOSFET datasheet

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