FQB55N10 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQB55N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 155 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Drain Current |Id|: 55 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 75 nC
Maximum Drain-Source On-State Resistance (Rds): 0.026 Ohm
Package: TO263_D2PAK
FQB55N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQB55N10 Datasheet (PDF)
1.1. fqb55n10 fqi55n10.pdf 
Size:1056K _fairchild_semi
October 2008 QFET FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 55A, 100V, RDS(on) = 0.026? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been especially tailored t
1.2. fqb55n10tm.pdf Size:1039K _fairchild_semi
October 2008 QFET® FQB55N10 / FQI55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 55A, 100V, RDS(on) = 0.026Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 75 nC) planar stripe, DMOS technology. • Low Crss ( typical 130 pF) This advanced technology has been especia
4.1. fqb55n06tm.pdf Size:602K _fairchild_semi
May 2001 TM QFET FQB55N06 / FQI55N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 35 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology has been especially t
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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