All MOSFET. NCEP055N12 Datasheet

 

NCEP055N12 MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP055N12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 99 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 380 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO-220

 NCEP055N12 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP055N12 Datasheet (PDF)

 ..1. Size:358K  ncepower
 ncep055n12.pdf

NCEP055N12 NCEP055N12

NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

 ..2. Size:358K  ncepower
 ncep055n12 ncep055n12d.pdf

NCEP055N12 NCEP055N12

NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

 0.1. Size:311K  ncepower
 ncep055n12ag.pdf

NCEP055N12 NCEP055N12

NCEP055N12AGNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =110A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.4m , typical @ VGS=4.5V losses are m

 0.2. Size:358K  ncepower
 ncep055n12d.pdf

NCEP055N12 NCEP055N12

NCEP055N12,NCEP055N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =120A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.2m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=5.0m , typical (TO-263

 0.3. Size:286K  ncepower
 ncep055n12g.pdf

NCEP055N12 NCEP055N12

NCEP055N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =110A switching performance. Both conduction and switching power RDS(ON)=5.2m , typical @ VGS=10V losses are minimized due to an extremely low combination

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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