All MOSFET. NCEP060N10D Datasheet

 

NCEP060N10D Datasheet and Replacement


   Type Designator: NCEP060N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 360 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-263
 

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NCEP060N10D Datasheet (PDF)

 ..1. Size:398K  ncepower
 ncep060n10 ncep060n10d.pdf pdf_icon

NCEP060N10D

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 ..2. Size:398K  ncepower
 ncep060n10d.pdf pdf_icon

NCEP060N10D

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 4.1. Size:368K  ncepower
 ncep060n10f.pdf pdf_icon

NCEP060N10D

NCEP060N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =52A switching performance. Both conduction and switching power RDS(ON)=6.7m , typical @ VGS=10V losses are minimized due to an extremely low combina

 4.2. Size:400K  ncepower
 ncep060n10g.pdf pdf_icon

NCEP060N10D

NCEP060N10GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical @ VGS=10V losses are minimized due to an extremely low combin

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Datasheet: NCEP055N12AG , NCEP055N12D , NCEP055N12G , NCEP055N30GU , NCEP055N60GU , NCEP058N85GU , NCEP058N85M , NCEP060N10 , IRFP460 , NCEP060N10F , NCEP060N10G , NCEP060N60G , NCEP063N10AGU , NCEP063N10GU , NCEP063N85G , NCEP065N10 , NCEP065N10AG .

History: NCEP072N10A | SIZ704DT

Keywords - NCEP060N10D MOSFET datasheet

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