NCEP060N10F Datasheet. Specs and Replacement

Type Designator: NCEP060N10F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 52 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0073 Ohm

Package: TO-220F

NCEP060N10F substitution

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NCEP060N10F datasheet

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NCEP060N10F

NCEP060N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =52A switching performance. Both conduction and switching power RDS(ON)=6.7m , typical @ VGS=10V losses are minimized due to an extremely low combina... See More ⇒

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NCEP060N10F

NCEP060N10, NCEP060N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒

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NCEP060N10F

NCEP060N10G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical @ VGS=10V losses are minimized due to an extremely low combin... See More ⇒

 4.3. Size:398K  ncepower
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NCEP060N10F

NCEP060N10, NCEP060N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒

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Detailed specifications: NCEP055N12D, NCEP055N12G, NCEP055N30GU, NCEP055N60GU, NCEP058N85GU, NCEP058N85M, NCEP060N10, NCEP060N10D, IRF1404, NCEP060N10G, NCEP060N60G, NCEP063N10AGU, NCEP063N10GU, NCEP063N85G, NCEP065N10, NCEP065N10AG, NCEP065N10AGU

Keywords - NCEP060N10F MOSFET specs

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