NCEP060N60G Datasheet. Specs and Replacement

Type Designator: NCEP060N60G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: TBD nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: DFN5X6-8L

NCEP060N60G substitution

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NCEP060N60G datasheet

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NCEP060N60G

http //www.ncepower.com NCEP060N60G NCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEP060N60G uses Super Trench II technology that is VDS =60V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m (max) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RD... See More ⇒

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NCEP060N60G

NCEP060N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =52A switching performance. Both conduction and switching power RDS(ON)=6.7m , typical @ VGS=10V losses are minimized due to an extremely low combina... See More ⇒

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NCEP060N60G

NCEP060N10, NCEP060N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex... See More ⇒

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NCEP060N60G

NCEP060N10G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical @ VGS=10V losses are minimized due to an extremely low combin... See More ⇒

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Detailed specifications: NCEP055N30GU, NCEP055N60GU, NCEP058N85GU, NCEP058N85M, NCEP060N10, NCEP060N10D, NCEP060N10F, NCEP060N10G, IRFB4110, NCEP063N10AGU, NCEP063N10GU, NCEP063N85G, NCEP065N10, NCEP065N10AG, NCEP065N10AGU, NCEP065N10AK, NCEP065N10GU

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