All MOSFET. NCEP060N60G Datasheet

 

NCEP060N60G Datasheet and Replacement


   Type Designator: NCEP060N60G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: TBD nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: DFN5X6-8L
 

 NCEP060N60G substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCEP060N60G Datasheet (PDF)

 ..1. Size:198K  ncepower
 ncep060n60g.pdf pdf_icon

NCEP060N60G

http://www.ncepower.com NCEP060N60GNCE N-Channel Super Trench II Power MOSFET (Primary) Description General Features The NCEP060N60G uses Super Trench II technology that is VDS =60V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m (max) @ VGS=10V switching performance. Both conduction and switching power Excellent gate charge x RD

 6.1. Size:368K  ncepower
 ncep060n10f.pdf pdf_icon

NCEP060N60G

NCEP060N10FNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =52A switching performance. Both conduction and switching power RDS(ON)=6.7m , typical @ VGS=10V losses are minimized due to an extremely low combina

 6.2. Size:398K  ncepower
 ncep060n10 ncep060n10d.pdf pdf_icon

NCEP060N60G

NCEP060N10, NCEP060N10DNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.6m , typical (TO-220)@ VGS=10V losses are minimized due to an ex

 6.3. Size:400K  ncepower
 ncep060n10g.pdf pdf_icon

NCEP060N60G

NCEP060N10GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =100A switching performance. Both conduction and switching power RDS(ON)=5.4m , typical @ VGS=10V losses are minimized due to an extremely low combin

SHOW MORE

Datasheet: NCEP055N30GU , NCEP055N60GU , NCEP058N85GU , NCEP058N85M , NCEP060N10 , NCEP060N10D , NCEP060N10F , NCEP060N10G , IRF640N , NCEP063N10AGU , NCEP063N10GU , NCEP063N85G , NCEP065N10 , NCEP065N10AG , NCEP065N10AGU , NCEP065N10AK , NCEP065N10GU .

History: IPL60R1K5C6S | IRL3103PBF | STB28N60M2 | STH270N8F7-6 | SSM9971GM | STB70N10F4 | NTP65N02R

Keywords - NCEP060N60G MOSFET datasheet

 NCEP060N60G cross reference
 NCEP060N60G equivalent finder
 NCEP060N60G lookup
 NCEP060N60G substitution
 NCEP060N60G replacement

 

 
Back to Top

 


 
.