NCEP065N10 Datasheet. Specs and Replacement
Type Designator: NCEP065N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 93 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 348 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO-220
NCEP065N10 substitution
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NCEP065N10 datasheet
ncep065n10.pdf
NCEP065N10 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =93A switching performance. Both conduction and switching power RDS(ON)=6.0m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co... See More ⇒
ncep065n10gu.pdf
http //www.ncepower.com NCEP065N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10GU uses Super Trench II technology that is V =100V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =5.9m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R prod... See More ⇒
ncep065n10ak.pdf
NCEP065N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.7m , typical @ VGS=4.5V losses are m... See More ⇒
ncep065n10agu.pdf
http //www.ncepower.com NCEP065N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10AGU uses Super Trench II technology that VDS =100V,ID =90A is uniquely optimized to provide the most efficient high RDS(ON)=5.3m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=6.5m (typical) @ VGS=4.5V switching power ... See More ⇒
Detailed specifications: NCEP060N10, NCEP060N10D, NCEP060N10F, NCEP060N10G, NCEP060N60G, NCEP063N10AGU, NCEP063N10GU, NCEP063N85G, IRFB4227, NCEP065N10AG, NCEP065N10AGU, NCEP065N10AK, NCEP065N10GU, NCEP065N12AGU, NCEP065N85D, NCEP068N10K, NCEP070N10AGU
Keywords - NCEP065N10 MOSFET specs
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