NCEP065N10AG Datasheet. Specs and Replacement

Type Designator: NCEP065N10AG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.5 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: DFN5X6-8L

NCEP065N10AG substitution

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NCEP065N10AG datasheet

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NCEP065N10AG

NCEP065N10AG NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=5.6m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.0m , typical @ VGS=4.5V losses are m... See More ⇒

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NCEP065N10AG

http //www.ncepower.com NCEP065N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10AGU uses Super Trench II technology that VDS =100V,ID =90A is uniquely optimized to provide the most efficient high RDS(ON)=5.3m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=6.5m (typical) @ VGS=4.5V switching power ... See More ⇒

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NCEP065N10AG

NCEP065N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.7m , typical @ VGS=4.5V losses are m... See More ⇒

 4.1. Size:767K  ncepower
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NCEP065N10AG

http //www.ncepower.com NCEP065N10GU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP065N10GU uses Super Trench II technology that is V =100V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =5.9m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R prod... See More ⇒

Detailed specifications: NCEP060N10D, NCEP060N10F, NCEP060N10G, NCEP060N60G, NCEP063N10AGU, NCEP063N10GU, NCEP063N85G, NCEP065N10, IRF3710, NCEP065N10AGU, NCEP065N10AK, NCEP065N10GU, NCEP065N12AGU, NCEP065N85D, NCEP068N10K, NCEP070N10AGU, NCEP070N10GU

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