All MOSFET. NCEP065N12AGU Datasheet

 

NCEP065N12AGU Datasheet and Replacement


   Type Designator: NCEP065N12AGU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0078 Ohm
   Package: DFN5X6-8L
 

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NCEP065N12AGU Datasheet (PDF)

 ..1. Size:1006K  ncepower
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NCEP065N12AGU

NCEP065N12AGUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =120V,I =100ADS Duniquely optimized to provide the most efficient high frequencyR =5.6m , typical @ V =10VDS(ON) GSswitching performance. Both conduction and switching powerR =6.9m , typical @ V =4.5VDS(ON) GSlosses ar

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NCEP065N12AGU

http://www.ncepower.com NCEP065N10GUNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe NCEP065N10GU uses Super Trench II technology that is V =100V,I =90ADS Duniquely optimized to provide the most efficient high frequencyR =5.9m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R prod

 5.2. Size:298K  ncepower
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NCEP065N12AGU

NCEP065N10NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =93A switching performance. Both conduction and switching power RDS(ON)=6.0m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co

 5.3. Size:362K  ncepower
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NCEP065N12AGU

NCEP065N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =85A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.0m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.7m , typical @ VGS=4.5V losses are m

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Datasheet: NCEP063N10AGU , NCEP063N10GU , NCEP063N85G , NCEP065N10 , NCEP065N10AG , NCEP065N10AGU , NCEP065N10AK , NCEP065N10GU , IRF9540 , NCEP065N85D , NCEP068N10K , NCEP070N10AGU , NCEP070N10GU , NCEP070N12 , NCEP070N12D , NCEP072N10A , NCEP075N85AGU .

History: STB40N20

Keywords - NCEP065N12AGU MOSFET datasheet

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