All MOSFET. NCEP070N10GU Datasheet

 

NCEP070N10GU Datasheet and Replacement


   Type Designator: NCEP070N10GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 105 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN5X6-8L
 

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NCEP070N10GU Datasheet (PDF)

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NCEP070N10GU

NCEP070N10GUNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =80A switching performance. Both conduction and switching power RDS(ON)=6.6m , typical@ VGS=10V losses are minimized due to an extremely low combinati

 4.1. Size:397K  ncepower
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NCEP070N10GU

NCEP070N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.35m , typical@ VGS=4.5V losses are minimiz

 5.1. Size:335K  ncepower
ncep070n12.pdf pdf_icon

NCEP070N10GU

NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

 5.2. Size:335K  ncepower
ncep070n12 ncep070n12d.pdf pdf_icon

NCEP070N10GU

NCEP070N12,NCEP070N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =100A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=6.3m , typical (TO-26

Datasheet: NCEP065N10AG , NCEP065N10AGU , NCEP065N10AK , NCEP065N10GU , NCEP065N12AGU , NCEP065N85D , NCEP068N10K , NCEP070N10AGU , AON7408 , NCEP070N12 , NCEP070N12D , NCEP072N10A , NCEP075N85AGU , NCEP075N85GU , NCEP078N10AG , NCEP078N10AK , NCEP078N10G .

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