All MOSFET. NCEP080N12D Datasheet

 

 

NCEP080N12D Datasheet and Replacement


   Type Designator: NCEP080N12D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 90 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-263
 

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NCEP080N12D Datasheet (PDF)

 ..1. Size:334K  ncepower
 ncep080n12 ncep080n12d.pdf pdf_icon

NCEP080N12D

NCEP080N12,NCEP080N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

 ..2. Size:334K  ncepower
 ncep080n12d.pdf pdf_icon

NCEP080N12D

NCEP080N12,NCEP080N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263

 4.1. Size:355K  ncepower
 ncep080n12g.pdf pdf_icon

NCEP080N12D

NCEP080N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =85A switching performance. Both conduction and switching power RDS(ON)=7.8m , typical @ VGS=10V losses are minimized due to an extremely low combinati

 4.2. Size:290K  ncepower
 ncep080n12i.pdf pdf_icon

NCEP080N12D

NCEP080N12INCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =90A switching performance. Both conduction and switching power RDS(ON)=9.0m , typical @ VGS=10V losses are minimized due to an extremely low combinati

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Datasheet: NCEP075N85GU , NCEP078N10AG , NCEP078N10AK , NCEP078N10G , NCEP080N10 , NCEP080N10A , NCEP080N10F , NCEP080N12 , 4435 , NCEP080N12G , NCEP080N12I , NCEP080N85 , NCEP080N85AK , NCEP080N85K , NCEP082N10AS , NCEP085N10AS , NCEP088NH150GU .

History: NCEP080N12G

Keywords - NCEP080N12D MOSFET datasheet

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