NCEP080N12I Datasheet. Specs and Replacement

Type Designator: NCEP080N12I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 275 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO-251

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NCEP080N12I datasheet

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NCEP080N12I

NCEP080N12I NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =90A switching performance. Both conduction and switching power RDS(ON)=9.0m , typical @ VGS=10V losses are minimized due to an extremely low combinati... See More ⇒

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NCEP080N12I

NCEP080N12G NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =85A switching performance. Both conduction and switching power RDS(ON)=7.8m , typical @ VGS=10V losses are minimized due to an extremely low combinati... See More ⇒

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NCEP080N12I

NCEP080N12,NCEP080N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263... See More ⇒

 4.3. Size:334K  ncepower
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NCEP080N12I

NCEP080N12,NCEP080N12D NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =90A uniquely optimized to provide the most efficient high frequency RDS(ON)=7.7m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=7.5m , typical (TO-263... See More ⇒

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Detailed specifications: NCEP078N10AK, NCEP078N10G, NCEP080N10, NCEP080N10A, NCEP080N10F, NCEP080N12, NCEP080N12D, NCEP080N12G, SKD502T, NCEP080N85, NCEP080N85AK, NCEP080N85K, NCEP082N10AS, NCEP085N10AS, NCEP088NH150GU, NCEP090N10AGU, NCEP090N10GU

Keywords - NCEP080N12I MOSFET specs

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