NCEP10N12K Datasheet and Replacement. Cross Reference Search

NCEP10N12K Datasheet (PDF)

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NCEP10N12KNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =8.7m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

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NCEP10N12,NCEP10N12DNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =70A uniquely optimized to provide the most efficient high frequency RDS(ON)=8.5m , typical (TO-220)@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=8.2m , typical (TO-263)@

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NCEP10N12AKNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =120V,I =65ADS Dswitching performance. Both conduction and switching power R =9m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combination

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NCEP10N12GNCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =65A switching performance. Both conduction and switching power RDS(ON)=8.5m , typical @ VGS=10V losses are minimized due to an extremely low combinatio