NCEP11N10AK Datasheet. Specs and Replacement

Type Designator: NCEP11N10AK

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 115 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO-252

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NCEP11N10AK datasheet

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NCEP11N10AK

http //www.ncepower.com NCEP11N10AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo... See More ⇒

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NCEP11N10AK

NCEP11N10AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim... See More ⇒

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NCEP11N10AK

http //www.ncepower.com NCEP11N10AQU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55A DS D uniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5V DS(ON... See More ⇒

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NCEP11N10AK

http //www.ncepower.com NCEP11N10AGU NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V ... See More ⇒

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Detailed specifications: NCEP10N12, NCEP10N12AK, NCEP10N12D, NCEP10N12G, NCEP10N12K, NCEP10N85AG, NCEP10N85AQ, NCEP11N10AGU, IRF2807, NCEP11N10AQU, NCEP11N10AS, NCEP11N12AGU, NCEP1212AS, NCEP1214AS, NCEP1216AS, NCEP1250AK, NCEP1260F

Keywords - NCEP11N10AK MOSFET specs

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