NCEP11N10AQU Datasheet and Replacement
Type Designator: NCEP11N10AQU
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: DFN3.3X3.3-8L
NCEP11N10AQU substitution
NCEP11N10AQU Datasheet (PDF)
ncep11n10aqu.pdf

http://www.ncepower.com NCEP11N10AQUNCE N-Channel Super Trench II Power MOSFETDescription General FeaturesThe NCEP11N10AQU uses Super Trench II technology that is V =100V,I =55ADS Duniquely optimized to provide the most efficient high frequency R =10.5m (typical) @ V =10VDS(ON) GSswitching performance. Both conduction and switching power R =13.5m (typical) @ V =4.5VDS(ON
ncep11n10as.pdf

NCEP11N10ASNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =100V,ID =12A uniquely optimized to provide the most efficient high frequency RDS(ON)=9.1m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=4.5V losses are minim
ncep11n10ak.pdf

http://www.ncepower.com NCEP11N10AKNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AK uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=11.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14.5m (typical) @ VGS=4.5V lo
ncep11n10agu.pdf

http://www.ncepower.com NCEP11N10AGUNCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP11N10AGU uses Super Trench II technology that is VDS =100V,ID =55A uniquely optimized to provide the most efficient high frequency RDS(ON)=10.5m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=13.5m (typical) @ VGS=4.5V
Datasheet: NCEP10N12AK , NCEP10N12D , NCEP10N12G , NCEP10N12K , NCEP10N85AG , NCEP10N85AQ , NCEP11N10AGU , NCEP11N10AK , IRF2807 , NCEP11N10AS , NCEP11N12AGU , NCEP1212AS , NCEP1214AS , NCEP1216AS , NCEP1250AK , NCEP1260F , NCEP1278 .
History: SNN1000L10D | HSBB3016 | WMP16N70SR | HSCE6032 | SWD4N40DC | HSBB4052 | SMT10N60
Keywords - NCEP11N10AQU MOSFET datasheet
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History: SNN1000L10D | HSBB3016 | WMP16N70SR | HSCE6032 | SWD4N40DC | HSBB4052 | SMT10N60



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