NCEP1216AS Datasheet. Specs and Replacement
Type Designator: NCEP1216AS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.9 nS
Cossⓘ -
Output Capacitance: 389 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0106 Ohm
Package: SOP8
- MOSFET ⓘ Cross-Reference Search
NCEP1216AS datasheet
..1. Size:409K ncepower
ncep1216as.pdf 
http //www.ncepower.com NCEP1216AS NCE N-Channel Super Trench Power MOSFET Description The NCEP1216AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw... See More ⇒
7.1. Size:420K ncepower
ncep1214as.pdf
Pb Free Product http //www.ncepower.com NCEP1214AS NCE N-Channel Super Trench Power MOSFET Description The NCEP1214AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
7.2. Size:427K ncepower
ncep1212as.pdf
Pb Free Product http //www.ncepower.com NCEP1212AS NCE N-Channel Super Trench Power MOSFET Description The NCEP1212AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
8.1. Size:309K ncepower
ncep12t11.pdf
http //www.ncepower.com NCEP12T11 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
8.2. Size:338K ncepower
ncep1278.pdf
Pb Free Product http //www.ncepower.com NCEP1278 NCE N-Channel Super Trench Power MOSFET Description The NCEP1278 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high... See More ⇒
8.3. Size:395K ncepower
ncep1290ak.pdf
http //www.ncepower.com NCEP1290AK NCE N-Channel Super Trench Power MOSFET Description The NCEP1290AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
8.4. Size:319K ncepower
ncep12n10aq.pdf
NCEP12N10AQ http //www.ncepower.com NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP12N10AQ uses Super Trench II technology that is VDS =100V,ID =46A uniquely optimized to provide the most efficient high frequency RDS(ON)=12.1m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=15.8m (typical) @ VGS=4.5V ... See More ⇒
8.5. Size:339K ncepower
ncep12t12d.pdf
Pb Free Product http //www.ncepower.com NCEP12T12D NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
8.6. Size:348K ncepower
ncep12t15.pdf
http //www.ncepower.com NCEP12T15 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
8.7. Size:409K ncepower
ncep1260f.pdf
Pb Free Product http //www.ncepower.com NCEP1260F NCE N-Channel Super Trench Power MOSFET Description The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high... See More ⇒
8.8. Size:343K ncepower
ncep12t12.pdf
Pb Free Product http //www.ncepower.com NCEP12T12 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
8.9. Size:349K ncepower
ncep12n12k.pdf
NCEP12N12K NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =60A switching performance. Both conduction and switching power RDS(ON)=12m , typical@ VGS=10V losses are minimized due to an extremely low combination ... See More ⇒
8.10. Size:347K ncepower
ncep12t18.pdf
Pb Free Product http //www.ncepower.com NCEP12T18 NCE N-Channel Super Trench Power MOSFET Description The NCEP12T18 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
8.11. Size:501K ncepower
ncep1250ak.pdf
Pb Free Product http //www.ncepower.com NCEP1250AK NCE N-Channel Super Trench Power MOSFET Description The NCEP1250AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
8.12. Size:328K ncepower
ncep12t10f.pdf
Pb Free Product http //www.ncepower.com NCEP12T10F NCE N-Channel Super Trench Power MOSFET Description The NCEP12T10F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
8.13. Size:394K ncepower
ncep12n12ak.pdf
NCEP12N12AK NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =60A uniquely optimized to provide the most efficient high frequency RDS(ON)=11m , typical @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=14m , typical @ VGS=4.5V losses are mini... See More ⇒
8.14. Size:358K ncepower
ncep12n12as.pdf
NCEP12N12AS NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =120V,ID =11A uniquely optimized to provide the most efficient high frequency RDS(ON)=13.3m , typical@ VGS=10V switching performance. Both conduction and switching power RDS(ON)=16.2m , typical@ VGS=4.5V losses are mi... See More ⇒
8.15. Size:302K ncepower
ncep12n12.pdf
NCEP12N12 NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =120V,ID =63A switching performance. Both conduction and switching power RDS(ON)=11.5m , typical (TO-220)@ VGS=10V losses are minimized due to an extremely low co... See More ⇒
8.16. Size:340K ncepower
ncep12t13a.pdf
http //www.ncepower.com NCEP12T13A NCE N-Channel Super Trench Power MOSFET Description The NCEP12T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit... See More ⇒
Detailed specifications: NCEP10N85AQ, NCEP11N10AGU, NCEP11N10AK, NCEP11N10AQU, NCEP11N10AS, NCEP11N12AGU, NCEP1212AS, NCEP1214AS, 75N75, NCEP1250AK, NCEP1260F, NCEP1278, NCEP1290AK, NCEP12N10AQ, NCEP12N12, NCEP12N12AK, NCEP12N12AS
Keywords - NCEP1216AS MOSFET specs
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