FQB7P20 Datasheet. Specs and Replacement

Type Designator: FQB7P20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm

Package: TO263 D2PAK

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FQB7P20 datasheet

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FQB7P20

November 2008 QFET FQB7P20 / FQI7P20 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been espec... See More ⇒

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 fqb7p20.pdf pdf_icon

FQB7P20

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

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 fqb7p20tm f085.pdf pdf_icon

FQB7P20

November 2009 QFET FQB7P20TM_F085 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especial... See More ⇒

 0.2. Size:819K  onsemi
 fqb7p20tm f085.pdf pdf_icon

FQB7P20

November 2009 QFET FQB7P20TM_F085 200V P-ChanneI MOSFET GeneraI Description Features These P-Channel enhancement mode power field effect -7.3A, -200V, RDS(on) = 0.69 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 19 nC) planar stripe, DMOS technology. Low Crss ( typical 25 pF) This advanced technology has been especial... See More ⇒

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Detailed specifications: FQB55N10, SDD01N70, FQB5N50C, FQB5N90, FQB6N80, FCH104N60FF085, FQB7N60, FCPF2250N80Z, IRF9540, FQB7P20TMF085, FQB8N60C, FCH072N60FF085, FQB8P10, FQB9N50C, FQD10N20C, FDMC8321LDC, FQD10N20L

Keywords - FQB7P20 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.