NCEP12T10F Datasheet and Replacement
Type Designator: NCEP12T10F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 55 nC
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0076 Ohm
Package: TO-220F
NCEP12T10F substitution
NCEP12T10F Datasheet (PDF)
ncep12t10f.pdf

Pb Free Producthttp://www.ncepower.com NCEP12T10FNCE N-Channel Super Trench Power MOSFET Description The NCEP12T10F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep12t11.pdf

http://www.ncepower.com NCEP12T11NCE N-Channel Super Trench Power MOSFET Description The NCEP12T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep12t12d.pdf

Pb Free Producthttp://www.ncepower.com NCEP12T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP12T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep12t15.pdf

http://www.ncepower.com NCEP12T15NCE N-Channel Super Trench Power MOSFET Description The NCEP12T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
Datasheet: NCEP1260F , NCEP1278 , NCEP1290AK , NCEP12N10AQ , NCEP12N12 , NCEP12N12AK , NCEP12N12AS , NCEP12N12K , AON7403 , NCEP12T11 , NCEP12T13A , NCEP12T15 , NCEP12T18 , NCEP13N10AS , NCEP1505S , NCEP1520AK , NCEP1520BK .
History: JMSL0302AU | HRP80N08K | NCE30PD08S | RU30L15H | SIS407ADN
Keywords - NCEP12T10F MOSFET datasheet
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History: JMSL0302AU | HRP80N08K | NCE30PD08S | RU30L15H | SIS407ADN



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