NCEP1545AK MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP1545AK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 45 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 33 nC
trⓘ - Rise Time: 6.5 nS
Cossⓘ - Output Capacitance: 145 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: TO-252
NCEP1545AK Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP1545AK Datasheet (PDF)
ncep1545ak.pdf
http://www.ncepower.com NCEP1545AKNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP1545AK uses Super Trench technology that isV =150V,I =45ADS Duniquely optimized to provide the most efficient high R =26m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =30m (typical) @ V =4.5VDS(ON) GSswitching power losses a
ncep1545ag.pdf
http://www.ncepower.com NCEP1545AGNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545AG uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=26m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=30m (typical) @ VGS=4.5V switching power losses are mi
ncep1545a.pdf
http://www.ncepower.com NCEP1545ANCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP1545AK uses Super Trench technology that isV =150V,I =45ADS Duniquely optimized to provide the most efficient high R =22m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =28m (typical) @ V =4.5VDS(ON) GSswitching power losses ar
ncep1545k.pdf
Pb Free Producthttp://www.ncepower.com NCEP1545KNCE N-Channel Super Trench Power MOSFET Description The NCEP1545K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
ncep1545g.pdf
http://www.ncepower.com NCEP1545GNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP1545G uses Super Trench technology that is VDS =150V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=24m (typical) @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching pow
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