NCEP15T18T Datasheet. Specs and Replacement

Type Designator: NCEP15T18T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 360 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 890 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO247-3L

NCEP15T18T substitution

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NCEP15T18T datasheet

 ..1. Size:802K  ncepower
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NCEP15T18T

http //www.ncepower.com NCEP15T18T NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency V =150V,I =180A DS D switching performance. Both conduction and switching power R =4.45m , typical@ V =10V DS(ON) GS losses are minimized due to an extrem... See More ⇒

 6.1. Size:372K  ncepower
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NCEP15T18T

http //www.ncepower.com NCEP15T14LL NCE N-Channel Super Trench Power MOSFET Description The series of devices uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =150V,ID =170A switching performance. Both conduction and switching power RDS(ON)=5.0m , typical@ VGS=10V losses are minimized due to an extre... See More ⇒

 6.2. Size:386K  ncepower
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NCEP15T18T

Pb Free Product http //www.ncepower.com NCEP15T14D NCE N-Channel Super Trench Power MOSFET Description The NCEP15T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high... See More ⇒

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NCEP15T18T

http //www.ncepower.com NCEP15T10V NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP15T10V uses Super Trench technology that is V =150V,I =100A DS D uniquely optimized to provide the most efficient high R =5.7m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switching... See More ⇒

Detailed specifications: NCEP1575GU, NCEP1580D, NCEP1580GU, NCEP15P30A, NCEP15P30AK, NCEP15T10V, NCEP15T14LL, NCEP15T14T, IRFZ44, NCEP15T26LL, NCEP16N85AK, NCEP18N10AG, NCEP18N10AK, NCEP18N10AQ, NCEP18N10AR, NCEP2390, NCEP2390D

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