All MOSFET. FQB8P10 Datasheet

 

FQB8P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQB8P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 65 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 12 nC

Maximum Drain-Source On-State Resistance (Rds): 0.53 Ohm

Package: TO263, D2PAK

FQB8P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQB8P10 Datasheet (PDF)

0.1. fqb8p10 fqi8p10.pdf Size:667K _fairchild_semi

FQB8P10
FQB8P10

TM QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored

0.2. fqb8p10tm fqi8p10tu.pdf Size:665K _fairchild_semi

FQB8P10
FQB8P10

TM QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect • -8.0A, -100V, RDS(on) = 0.53Ω @VGS = -10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar stripe, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored

 

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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