All MOSFET. FQB8P10 Datasheet

 

FQB8P10 Datasheet and Replacement


   Type Designator: FQB8P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: TO263 D2PAK
 

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FQB8P10 Datasheet (PDF)

 ..1. Size:667K  fairchild semi
 fqb8p10 fqi8p10.pdf pdf_icon

FQB8P10

TMQFETFQB8P10 / FQI8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

 0.1. Size:665K  fairchild semi
 fqb8p10tm fqi8p10tu.pdf pdf_icon

FQB8P10

TMQFETFQB8P10 / FQI8P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored

Datasheet: FQB6N80 , FCH104N60FF085 , FQB7N60 , FCPF2250N80Z , FQB7P20 , FQB7P20TMF085 , FQB8N60C , FCH072N60FF085 , K3569 , FQB9N50C , FQD10N20C , FDMC8321LDC , FQD10N20L , FDPF041N06BL1 , FQD11P06 , FQD12N20 , FQP13N50C .

History: NTTFS4932N | IRLB3034 | FDD7N20TM | TPC60R350C | RFL1N10L

Keywords - FQB8P10 MOSFET datasheet

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