FQB8P10 PDF Specs and Replacement
Type Designator: FQB8P10
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: TO263 D2PAK
FQB8P10 substitution
FQB8P10 PDF Specs
fqb8p10 fqi8p10.pdf
TM QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored... See More ⇒
fqb8p10tm fqi8p10tu.pdf
TM QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored... See More ⇒
Detailed specifications: FQB6N80 , FCH104N60FF085 , FQB7N60 , FCPF2250N80Z , FQB7P20 , FQB7P20TMF085 , FQB8N60C , FCH072N60FF085 , 2N7002 , FQB9N50C , FQD10N20C , FDMC8321LDC , FQD10N20L , FDPF041N06BL1 , FQD11P06 , FQD12N20 , FQP13N50C .
Keywords - FQB8P10 MOSFET specs
FQB8P10 cross reference
FQB8P10 equivalent finder
FQB8P10 pdf lookup
FQB8P10 substitution
FQB8P10 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
LIST
Last Update
MOSFET: AP4688S | AP4606 | AP4580
Popular searches
irf640n | 2n3904 | bc547 datasheet | k3797 mosfet | bs170 datasheet | tip41c | irfp460 | irfz44n mosfet