FQB8P10 PDF and Equivalents Search

 

FQB8P10 Specs and Replacement

Type Designator: FQB8P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 12 nC

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm

Package: TO263 D2PAK

FQB8P10 substitution

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FQB8P10 datasheet

 ..1. Size:667K  fairchild semi
 fqb8p10 fqi8p10.pdf pdf_icon

FQB8P10

TM QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored... See More ⇒

 0.1. Size:665K  fairchild semi
 fqb8p10tm fqi8p10tu.pdf pdf_icon

FQB8P10

TM QFET FQB8P10 / FQI8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -8.0A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored... See More ⇒

Detailed specifications: FQB6N80 , FCH104N60FF085 , FQB7N60 , FCPF2250N80Z , FQB7P20 , FQB7P20TMF085 , FQB8N60C , FCH072N60FF085 , 2N7002 , FQB9N50C , FQD10N20C , FDMC8321LDC , FQD10N20L , FDPF041N06BL1 , FQD11P06 , FQD12N20 , FQP13N50C .

Keywords - FQB8P10 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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