NCEP30T19G Datasheet. Specs and Replacement
Type Designator: NCEP30T19G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 185 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1930 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: DFN5X6-8L
NCEP30T19G substitution
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NCEP30T19G datasheet
ncep30t19g.pdf
Pb Free Product http //www.ncepower.com NCEP30T19G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep30t17gu.pdf
Pb Free Product http //www.ncepower.com NCEP30T17GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g hig... See More ⇒
ncep30t17g.pdf
Pb Free Product http //www.ncepower.com NCEP30T17G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep30t12g.pdf
Pb Free Product http //www.ncepower.com NCEP30T12G NCE N-Channel Super Trench Power MOSFET Description The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
Detailed specifications: NCEP3065QU, NCEP3085EG, NCEP30P90G, NCEP30P90K, NCEP30PT16G, NCEP30T15GU, NCEP30T17G, NCEP30T17GU, IRF4905, NCEP30T21GU, NCEP30T22GU, NCEP4045GU, NCEP4060EQ, NCEP4075AGU, NCEP4075GU, NCEP4085EG, NCEP4090AGU
Keywords - NCEP30T19G MOSFET specs
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