All MOSFET. NCEP30T22GU Datasheet

 

NCEP30T22GU Datasheet and Replacement


   Type Designator: NCEP30T22GU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 2670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.00108 Ohm
   Package: PDFN5X6-8L
 

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NCEP30T22GU Datasheet (PDF)

 ..1. Size:783K  ncepower
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NCEP30T22GU

http://www.ncepower.com NCEP30T22GUNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP30T22GU uses Super Trench technology that isV =30V,I =220ADS Duniquely optimized to provide the most efficient high R =0.62m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.80m (typical) @ V =4.5VDS(ON) GSswitching power lo

 6.1. Size:725K  ncepower
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NCEP30T22GU

http://www.ncepower.com NCEP30T21GUNCE N-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP30T21GU uses Super Trench technology that isV =30V,I =210ADS Duniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.85m (typical) @ V =4.5VDS(ON) GSswitching power lo

 7.1. Size:1031K  ncepower
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NCEP30T22GU

Pb Free Producthttp://www.ncepower.com NCEP30T17GUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP30T17GU uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

 7.2. Size:366K  ncepower
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NCEP30T22GU

Pb Free Producthttp://www.ncepower.com NCEP30T17GNCE N-Channel Super Trench Power MOSFET Description The NCEP30T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

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Datasheet: NCEP30P90G , NCEP30P90K , NCEP30PT16G , NCEP30T15GU , NCEP30T17G , NCEP30T17GU , NCEP30T19G , NCEP30T21GU , AO3400 , NCEP4045GU , NCEP4060EQ , NCEP4075AGU , NCEP4075GU , NCEP4085EG , NCEP4090AGU , NCEP4090GU , NCEP40P07S .

History: NCE6009AS

Keywords - NCEP30T22GU MOSFET datasheet

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