NCEP40P35GU MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP40P35GU
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 18.5 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: PDFN5X6-8L
NCEP40P35GU Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP40P35GU Datasheet (PDF)
ncep40p35gu.pdf
http://www.ncepower.com NCEP40P35GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P35GU uses Super Trench technology that is V =-40V,I =-35ADS Duniquely optimized to provide the most efficient high frequencyR =19.0m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =28.0m (typical) @ V =-4.5VDS(ON)
ncep40p30k.pdf
http://www.ncepower.com NCEP40P30KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P30K uses Super Trench technology that is V =-40V,I =-30ADS Duniquely optimized to provide the most efficient high frequencyR =22.5m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =31.5m (typical) @ V =-4.5VDS(ON) G
ncep40p30q.pdf
http://www.ncepower.com NCEP40P30QNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P30Q uses Super Trench technology that is V =-40V,I =-30ADS Duniquely optimized to provide the most efficient high frequencyR =21.0m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =32.0m (typical) @ V =-4.5VDS(ON) G
ncep40p80d.pdf
http://www.ncepower.com NCEP40P80DNCE P-Channel Super Trench Power MOSFET Description The NCEP40P80D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep40p65gu.pdf
http://www.ncepower.comNCEP40P65GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65GU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)
ncep40pt15d.pdf
http://www.ncepower.com NCEP40PT15DNCE P-Channel Super Trench Power MOSFET Description The NCEP40PT15D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep40pt15g.pdf
http://www.ncepower.com NCEP40PT15GNCE P-Channel Super Trench Power MOSFETDescription General FeaturesThe NCEP40PT15G uses Super Trench technology that is V =-40V,I =-150ADS Duniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching power R =3.8m (typical) @ V =-4.5VDS(ON) GS
ncep40p60k.pdf
http://www.ncepower.comNCEP40P60KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60K uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G
ncep40p80k.pdf
Pb Free Producthttp://www.ncepower.com NCEP40P80KNCE P-Channel Super Trench Power MOSFET Description The NCEP40P80K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep40pt13gu.pdf
http://www.ncepower.com NCEP40PT13GUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT13GU uses Super Trench technology that is V =-40V,I =-130ADS Duniquely optimized to provide the most efficient high frequencyR =3.2m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =4.8m (typical) @ V =-4.5VDS(ON
ncep40pt13d.pdf
http://www.ncepower.com NCEP40PT13DNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT13D uses Super Trench technology that is V =-40V,I =-130ADS Duniquely optimized to provide the most efficient high frequencyR =3.85m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =5.0m (typical) @ V =-4.5VDS(ON)
ncep40p80g.pdf
http://www.ncepower.com NCEP40P80GNCE P-Channel Super Trench Power MOSFET Description General Features The NCEP40P80G uses Super Trench technology that is VDS =-40V,ID =-80A uniquely optimized to provide the most efficient high frequency RDS(ON)=6.3m (typical) @ VGS=-10V switching performance. Both conduction and switching power RDS(ON)=9.0m (typical) @ VGS=-4.5V
ncep40pt12k.pdf
http://www.ncepower.com NCEP40PT12KNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT12K uses Super Trench technology that is V =-40V,I =-120ADS Duniquely optimized to provide the most efficient high frequencyR =4.55m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =7.0m (typical) @ V =-4.5VDS(ON)
ncep40p65qu.pdf
http://www.ncepower.comNCEP40P65QUNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P65QU uses Super Trench technology that is V =-40V,I =-65ADS Duniquely optimized to provide the most efficient high frequencyR =7.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =11.5m (typical) @ V =-4.5VDS(ON)
ncep40p07s.pdf
http://www.ncepower.com NCEP40P07SNCE P-Channel Super Trench Power MOSFET Description The NCEP40P07S uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
ncep40p60g.pdf
http://www.ncepower.comNCEP40P60GNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40P60G uses Super Trench technology that is V =-40V,I =-60ADS Duniquely optimized to provide the most efficient high frequencyR =8.8m (typical) @ V =-10VDS(ON) GSswitching performance. Both conduction and switching powerR =12.5m (typical) @ V =-4.5VDS(ON) G
ncep40p60q.pdf
http://www.ncepower.comNCEP40P60QNCE P-Channel Super Trench Power MOSFETDescriptionThe NCEP40P60Q uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =-40V,I =-60ADS Dswitching performance. Both conduction and switching power R =8.8m (typical) @ V =-10VDS(ON) GSlosses are minimized due to an extremely lo
ncep40pt30vd.pdf
http://www.ncepower.comNCEP40PT30VDNCE P-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP40PT30VD uses Super Trench technology that is V =-40V,I =-300ADS Duniquely optimized to provide the most efficient highR =1.6m , typical@ V =-10VDS(ON) GSfrequency switching performance. Both conduction andR =2.2m , typical@ V =-4.5VDS(ON) GSswitching p
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