All MOSFET. NCEP40T11 Datasheet

 

NCEP40T11 Datasheet and Replacement


   Type Designator: NCEP40T11
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 860 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-220
      - MOSFET Cross-Reference Search

 

NCEP40T11 Datasheet (PDF)

 ..1. Size:343K  ncepower
 ncep40t11.pdf pdf_icon

NCEP40T11

http://www.ncepower.com NCEP40T11NCE N-Channel Super Trench Power MOSFET Description The NCEP40T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swi

 0.1. Size:1124K  ncepower
 ncep40t11ak.pdf pdf_icon

NCEP40T11

Pb Free Producthttp://www.ncepower.com NCEP40T11AKNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T11AK uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghig

 0.2. Size:763K  ncepower
 ncep40t11k.pdf pdf_icon

NCEP40T11

http://www.ncepower.comNCEP40T11KNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T11K uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch

 0.3. Size:331K  ncepower
 ncep40t11ag.pdf pdf_icon

NCEP40T11

Pb Free Producthttp://www.ncepower.com NCEP40T11AGNCE N-Channel Super Trench Power MOSFET Description The NCEP40T11AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

SHOW MORE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STL20DN10F7 | AP30H80Q | R6006JND3 | 1N70Z | KDS2572 | 19N10L-TM3-T | 2SK804

Keywords - NCEP40T11 MOSFET datasheet

 NCEP40T11 cross reference
 NCEP40T11 equivalent finder
 NCEP40T11 lookup
 NCEP40T11 substitution
 NCEP40T11 replacement

 

 
Back to Top

 


 
.