All MOSFET. NCEP40T20AGU Datasheet

 

NCEP40T20AGU Datasheet and Replacement


   Type Designator: NCEP40T20AGU
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 2320.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0013 Ohm
   Package: DFN5X6-8L
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NCEP40T20AGU Datasheet (PDF)

 ..1. Size:732K  ncepower
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NCEP40T20AGU

Pb Free Producthttp://www.ncepower.com NCEP40T20AGUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T20AGU uses Super Trench technology thatGeneral Featuresis uniquely optimized to provide the most efficient high V =40V,I =200ADS Dfrequency switching performance. Both conduction andR =0.95m , typical @ V =10VDS(ON) GSswitching power losses are minimized d

 4.1. Size:734K  ncepower
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NCEP40T20AGU

Pb Free Producthttp://www.ncepower.comNCEP40T20ALLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =250ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimiz

 4.2. Size:672K  ncepower
ncep40t20asl.pdf pdf_icon

NCEP40T20AGU

http://www.ncepower.comNCEP40T20ASLNCE N-Channel Super Trench Power MOSFETDescriptionThe series of devices uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =40V,I =340ADS Dswitching performance. Both conduction and switching power R =1.1m , typical @ V =10VDS(ON) GSlosses are minimized due to an extr

 4.3. Size:535K  ncepower
ncep40t20a.pdf pdf_icon

NCEP40T20AGU

http://www.ncepower.comNCEP40T20ANCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP40T20A uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switch

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BRCS3402MA | RW1C020UN | IRF441 | AP9926GEO | GSM3050S | WMS08DP03TS | STD4N62K3

Keywords - NCEP40T20AGU MOSFET datasheet

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