All MOSFET. NCEP6016AS Datasheet

 

NCEP6016AS Datasheet and Replacement


   Type Designator: NCEP6016AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 359 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: SOP8
      - MOSFET Cross-Reference Search

 

NCEP6016AS Datasheet (PDF)

 ..1. Size:365K  ncepower
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NCEP6016AS

Pb Free Producthttp://www.ncepower.com NCEP6016ASNCE N-Channel Super Trench Power MOSFET Description The NCEP6016AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.1. Size:305K  ncepower
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NCEP6016AS

http://www.ncepower.com NCEP6012ASNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP6012AS uses Super Trench technology that is VDS =60V,ID =12A uniquely optimized to provide the most efficient high RDS(ON)=12.7m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=14.5m (typical) @ VGS=4.5V switching power losses are

 7.2. Size:321K  ncepower
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NCEP6016AS

http://www.ncepower.com NCEP6015ASNCE N-Channel Super Trench Power MOSFET Description The NCEP6015AS uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =15A frequency switching performance. Both conduction and RDS(ON)=8.3m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS

 8.1. Size:337K  ncepower
ncep6090gu.pdf pdf_icon

NCEP6016AS

http://www.ncepower.com NCEP6090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: R5009FNJ | RQK0609CQDQS | AP3P7R0EMT | TT8U1 | KCF3650A | 1N60L-TMS2-T | HSCC8211

Keywords - NCEP6016AS MOSFET datasheet

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