All MOSFET. NCEP6035AG Datasheet

 

NCEP6035AG Datasheet and Replacement


   Type Designator: NCEP6035AG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 2.7 nS
   Cossⓘ - Output Capacitance: 156 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: DFN5X6-8L
      - MOSFET Cross-Reference Search

 

NCEP6035AG Datasheet (PDF)

 ..1. Size:322K  ncepower
ncep6035ag.pdf pdf_icon

NCEP6035AG

http://www.ncepower.com NCEP6035AGNCE N-Channel Super Trench Power MOSFET Description The NCEP6035AG uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =35A frequency switching performance. Both conduction and RDS(ON)=9.8m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS

 5.1. Size:716K  ncepower
ncep6035aqu.pdf pdf_icon

NCEP6035AG

http://www.ncepower.com NCEP6035AQUNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP6035AQU uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =35ADS Dfrequency switching performance. Both conduction and R =10.0m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to an extremely low

 8.1. Size:337K  ncepower
ncep6090gu.pdf pdf_icon

NCEP6035AG

http://www.ncepower.com NCEP6090GUNCE N-Channel Super Trench Power MOSFET Description The NCEP6090GU uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =90A frequency switching performance. Both conduction and RDS(ON)=2.9m (typical) @ VGS=10V switching power losses are minimized due to an extremely low

 8.2. Size:493K  ncepower
ncep6080ag.pdf pdf_icon

NCEP6035AG

Pb Free Product http://www.ncepower.com NCEP6080AG NCE N-Channel Super Trench Power MOSFET Description The NCEP6080AG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: HSBA6016 | SUN05A25F | AP3P7R0EMT | IXFC80N08 | PDC3960X | 2SK1855 | 12N65KG-TF2-T

Keywords - NCEP6035AG MOSFET datasheet

 NCEP6035AG cross reference
 NCEP6035AG equivalent finder
 NCEP6035AG lookup
 NCEP6035AG substitution
 NCEP6035AG replacement

 

 
Back to Top

 


 
.