NCEP60T12K MOSFET. Datasheet pdf. Equivalent
Type Designator: NCEP60T12K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 51 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 650 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO-252
NCEP60T12K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCEP60T12K Datasheet (PDF)
ncep60t12k.pdf
Pb Free Producthttp://www.ncepower.com NCEP60T12KNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12K uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t12a.pdf
Pb Free Product http://www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O
ncep60t12ak.pdf
Pb Free Producthttp://www.ncepower.com NCEP60T12AKNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12AK uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for
ncep60t12t.pdf
http://www.ncepower.com NCEP60T12TNCE N-Channel Super Trench Power MOSFET Description The NCEP60T12T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
ncep60t12ad.pdf
Pb Free ProductNCEP60T12ADhttp://www.ncepower.comNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP60T12AD uses Super Trench technology that isGeneral Featuresuniquely optimized to provide the most efficient high V =60V,I =120ADS Dfrequency switching performance. Both conduction and R
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: BF1207 | NDF08N60Z
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