NCEP85T25VD Specs and Replacement
Type Designator: NCEP85T25VD
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 250 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 73 nS
Cossⓘ - Output Capacitance: 1700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO-263-7L
NCEP85T25VD substitution
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NCEP85T25VD datasheet
ncep85t25vd.pdf
http //www.ncepower.com NCEP85T25VD NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc... See More ⇒
ncep85t25.pdf
Pb Free Product http //www.ncepower.com NCEP85T25 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-f... See More ⇒
ncep85t25d.pdf
Pb Free Product http //www.ncepower.com NCEP85T25D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
ncep85t25t.pdf
Pb Free Product http //www.ncepower.com NCEP85T25T NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ... See More ⇒
Detailed specifications: NCEP60T18A , NCEP60T18D , NCEP60T20D , NCEP60T20LL , NCEP8588 , NCEP85T10G , NCEP85T15D , NCEP85T25 , IRF640N , NCEP85T30LL , NCEP85T30T , NCEP8814AS , NCEP8818AS , NCEPB302G , NCEPB303GU , NCES120R036T4 , NCES120R062T4 .
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