All MOSFET. NCEP85T30LL Datasheet

 

NCEP85T30LL Datasheet and Replacement


   Type Designator: NCEP85T30LL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 450 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 330 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 73 nS
   Cossⓘ - Output Capacitance: 1700 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
   Package: TOLL
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NCEP85T30LL Datasheet (PDF)

 ..1. Size:333K  ncepower
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NCEP85T30LL

NCEP85T30LLNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP85T30LL uses Super Trench technology that is VDS =85V,ID =330A uniquely optimized to provide the most efficient high RDS(ON)=1.6m , typical @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching power losses are min

 5.1. Size:352K  ncepower
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NCEP85T30LL

http://www.ncepower.com NCEP85T30TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 6.1. Size:313K  ncepower
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NCEP85T30LL

Pb Free Producthttp://www.ncepower.com NCEP85T35TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T35T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.1. Size:912K  ncepower
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NCEP85T30LL

http://www.ncepower.com NCEP85T15DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T15D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2SJ175 | MMBF5457 | 2N3797 | RS3E075AT | IPD90N06S4-05 | IRLIZ14A | IRF5802TR

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