NCEP8814AS Datasheet and Replacement
   Type Designator: NCEP8814AS
   Type of Transistor: MOSFET
   Type of Control Channel: N
 -Channel   
Pd ⓘ
 - Maximum Power Dissipation: 3.5
 W   
|Vds|ⓘ - Maximum Drain-Source Voltage: 88
 V   
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
 V   
|Id| ⓘ - Maximum Drain Current: 14
 A   
Tj ⓘ - Maximum Junction Temperature: 150
 °C   
tr ⓘ - Rise Time: 7
 nS   
Cossⓘ - 
Output Capacitance: 250
 pF   
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0112
 Ohm
		   Package: 
SOP8
				
				  
				 
   - 
MOSFET ⓘ Cross-Reference Search
 
		
NCEP8814AS Datasheet (PDF)
 ..1.  Size:379K  ncepower
 ncep8814as.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP8814ASNCE N-Channel Super Trench Power MOSFET Description The NCEP8814AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sc
 7.1.  Size:381K  ncepower
 ncep8818as.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP8818ASNCE N-Channel Super Trench Power MOSFET Description The NCEP8818AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for 
 9.1.  Size:912K  ncepower
 ncep85t15d.pdf 
 
						  
 
http://www.ncepower.com NCEP85T15DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T15D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi
 9.2.  Size:330K  ncepower
 ncep8588.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP8588NCE N-Channel Super Trench Power MOSFET Description The NCEP8588 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
 9.3.  Size:323K  ncepower
 ncep85t16d.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T16DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for 
 9.4.  Size:1128K  ncepower
 ncep85t25vd.pdf 
 
						  
 
http://www.ncepower.com NCEP85T25VDNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25VD uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc
 9.5.  Size:323K  ncepower
 ncep85t12.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T12NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
 9.6.  Size:333K  ncepower
 ncep85t30ll.pdf 
 
						  
 
NCEP85T30LLNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP85T30LL uses Super Trench technology that is  VDS =85V,ID =330A uniquely optimized to provide the most efficient high RDS(ON)=1.6m , typical @ VGS=10V frequency switching performance. Both conduction and  Excellent gate charge x RDS(on) product(FOM) switching power losses are min
 9.7.  Size:753K  ncepower
 ncep85t25.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.comNCEP85T25NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-f
 9.8.  Size:347K  ncepower
 ncep85t12d.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for 
 9.9.  Size:385K  ncepower
 ncep85t14.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T14NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
 9.10.  Size:296K  ncepower
 ncep85t25d.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T25DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for 
 9.11.  Size:345K  ncepower
 ncep85t16.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T16NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
 9.12.  Size:352K  ncepower
 ncep85t30t.pdf 
 
						  
 
http://www.ncepower.com NCEP85T30TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw
 9.13.  Size:365K  ncepower
 ncep85t10g.pdf 
 
						  
 
http://www.ncepower.com NCEP85T10GNCE N-Channel Super Trench Power MOSFET Description The NCEP85T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit
 9.14.  Size:298K  ncepower
 ncep85t25t.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T25TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for 
 9.15.  Size:313K  ncepower
 ncep85t35t.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T35TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T35T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for 
 9.16.  Size:385K  ncepower
 ncep85t11.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T11NCE N-Channel Super Trench Power MOSFET Description The NCEP85T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi
 9.17.  Size:342K  ncepower
 ncep85t15.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T15NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
 9.18.  Size:355K  ncepower
 ncep85t14d.pdf 
 
						  
 
Pb Free Producthttp://www.ncepower.com NCEP85T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for 
Datasheet: NCEP60T20LL
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Keywords - NCEP8814AS MOSFET datasheet
 NCEP8814AS cross reference
 NCEP8814AS equivalent finder
 NCEP8814AS lookup
 NCEP8814AS substitution
 NCEP8814AS replacement
 
 
