All MOSFET. NCEP8818AS Datasheet

 

NCEP8818AS MOSFET. Datasheet pdf. Equivalent


   Type Designator: NCEP8818AS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 88 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10.5 nS
   Cossⓘ - Output Capacitance: 611 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: SOP8

 NCEP8818AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NCEP8818AS Datasheet (PDF)

 ..1. Size:381K  ncepower
ncep8818as.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP8818ASNCE N-Channel Super Trench Power MOSFET Description The NCEP8818AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 7.1. Size:379K  ncepower
ncep8814as.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP8814ASNCE N-Channel Super Trench Power MOSFET Description The NCEP8814AS uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for Sc

 9.1. Size:912K  ncepower
ncep85t15d.pdf

NCEP8818AS
NCEP8818AS

http://www.ncepower.com NCEP85T15DNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T15D uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switchi

 9.2. Size:330K  ncepower
ncep8588.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP8588NCE N-Channel Super Trench Power MOSFET Description The NCEP8588 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 9.3. Size:323K  ncepower
ncep85t16d.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T16DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T16D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 9.4. Size:1128K  ncepower
ncep85t25vd.pdf

NCEP8818AS
NCEP8818AS

http://www.ncepower.com NCEP85T25VDNCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25VD uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-frequency switc

 9.5. Size:323K  ncepower
ncep85t12.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T12NCE N-Channel Super Trench Power MOSFET Description The NCEP85T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.6. Size:333K  ncepower
ncep85t30ll.pdf

NCEP8818AS
NCEP8818AS

NCEP85T30LLNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP85T30LL uses Super Trench technology that is VDS =85V,ID =330A uniquely optimized to provide the most efficient high RDS(ON)=1.6m , typical @ VGS=10V frequency switching performance. Both conduction and Excellent gate charge x RDS(on) product(FOM) switching power losses are min

 9.7. Size:753K  ncepower
ncep85t25.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.comNCEP85T25NCE N-Channel Super Trench Power MOSFETDescriptionThe NCEP85T25 uses Super Trench technology that isuniquely optimized to provide the most efficient highfrequency switching performance. Both conduction andswitching power losses are minimized due to an extremelylow combination of R and Q . This device is ideal forDS(ON) ghigh-f

 9.8. Size:347K  ncepower
ncep85t12d.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T12DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T12D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 9.9. Size:385K  ncepower
ncep85t14.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T14NCE N-Channel Super Trench Power MOSFET Description The NCEP85T14 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.10. Size:296K  ncepower
ncep85t25d.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T25DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 9.11. Size:345K  ncepower
ncep85t16.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T16NCE N-Channel Super Trench Power MOSFET Description The NCEP85T16 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.12. Size:352K  ncepower
ncep85t30t.pdf

NCEP8818AS
NCEP8818AS

http://www.ncepower.com NCEP85T30TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T30T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency sw

 9.13. Size:365K  ncepower
ncep85t10g.pdf

NCEP8818AS
NCEP8818AS

http://www.ncepower.com NCEP85T10GNCE N-Channel Super Trench Power MOSFET Description The NCEP85T10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

 9.14. Size:298K  ncepower
ncep85t25t.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T25TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 9.15. Size:313K  ncepower
ncep85t35t.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T35TNCE N-Channel Super Trench Power MOSFET Description The NCEP85T35T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

 9.16. Size:385K  ncepower
ncep85t11.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T11NCE N-Channel Super Trench Power MOSFET Description The NCEP85T11 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 9.17. Size:342K  ncepower
ncep85t15.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T15NCE N-Channel Super Trench Power MOSFET Description The NCEP85T15 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

 9.18. Size:355K  ncepower
ncep85t14d.pdf

NCEP8818AS
NCEP8818AS

Pb Free Producthttp://www.ncepower.com NCEP85T14DNCE N-Channel Super Trench Power MOSFET Description The NCEP85T14D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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