FQD12N20LTMF085
MOSFET. Datasheet pdf. Equivalent
Type Designator: FQD12N20LTMF085
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 55
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 21
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28
Ohm
Package:
TO252
DPAK
FQD12N20LTMF085
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQD12N20LTMF085
Datasheet (PDF)
3.1. Size:640K fairchild semi
fqd12n20ltm f085.pdf 
June 2010FQD12N20LTM_F085 200V Logic Level N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especiall
3.2. Size:699K fairchild semi
fqd12n20ltf fqd12n20ltm fqd12n20l fqu12n20l.pdf
January 2009QFETFQD12N20L / FQU12N20L200V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 16 nC)planar stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been
5.1. Size:1315K onsemi
fqd12n20l.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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