All MOSFET. MRF1507T1 Equivalents Search

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line MRF1507 RF Power Field Effect Transistor MRF1507T1 N Channel Enhancement Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this device makes it ideal for ... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1507/D The RF MOSFET Line MRF1507 RF Power Field Effect Transistor MRF1507T1 N Channel Enhancement Mode Lateral MOSFETs The MRF1507 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 V performance of this device makes it ideal for ... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line NPN Silicon MRF15030 RF Power Transistor Designed for 26 volts microwave large signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 1600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics ... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15030/D The RF Line NPN Silicon MRF15030 RF Power Transistor Designed for 26 volts microwave large signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 1600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics ... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub Micron Bipolar Line MRF15060 RF Power Bipolar Transistors MRF15060S Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large signal, common emitter class A and 60 W, 1.... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Microwave Pulse MRF1500 Power Transistor Motorola Preferred Device Designed for 1025 1150 MHz pulse common base amplifier applications such as DME. Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak 500 W (PEAK), 1025 1150 MHz Gain = 5.2 dB Min MICROWAVE POWER 100% Tested ... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15060/D The RF Sub Micron Bipolar Line MRF15060 RF Power Bipolar Transistors MRF15060S Designed for broadband commercial and industrial applications at frequen- cies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large signal, common emitter class A and 60 W, 1.... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF15090/D Advance Information The RF Line MRF15090 NPN Silicon RF Power Transistor Designed for 26 volts microwave large signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400 1600 MHz. 90 W, 1.5 GHz Specified 26 Volts, 1... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF1500/D The RF Line Microwave Pulse MRF1500 Power Transistor Motorola Preferred Device Designed for 1025 1150 MHz pulse common base amplifier applications such as DME. Guaranteed Performance @ 1090 MHz Output Power = 500 Watts Peak 500 W (PEAK), 1025 1150 MHz Gain = 5.2 dB Min MICROWAVE POWER 100% Tested ... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF150 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (T... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF150 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (T... See More ⇒

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF150/D The RF MOSFET Line RF Power Field-Effect Transistor N Channel Enhancement Mode MRF150 Designed primarily for linear large signal output stages up to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 17 dB (Typ) 150 W, to 150 MHz Efficiency = 45% (T... See More ⇒