NDS9952A
MOSFET. Datasheet pdf. Equivalent
Type Designator: NDS9952A
Type of Transistor: MOSFET
Type of Control Channel: NP
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.8
V
|Id|ⓘ - Maximum Drain Current: 3.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 27
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
SO8
NDS9952A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NDS9952A
Datasheet (PDF)
..1. Size:234K fairchild semi
nds9952a.pdf 
February 1996 NDS9952ADual N & P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese dual N- and P-channel enhancement mode powerN-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild'sP-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. Thisvery high de
8.1. Size:209K fairchild semi
nds9956a.pdf
February 1996 NDS9956ADual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, highHigh density cell design for extremely low RDS(ON).cell density, DMOS technology. This very high densityprocess is especia
8.2. Size:210K fairchild semi
nds9953a.pdf
February 1996 NDS9953ADual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V.transistors are produced using Fairchild's proprietary, highHigh density cell design for extremely low RDS(ON).cell density, DMOS technology. This very high densityprocess is espe
8.3. Size:208K fairchild semi
nds9959.pdf
February 1996 NDS9959Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON).especially
Datasheet: FQD10N20L
, FDPF041N06BL1
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, RFP50N06
, FQD12P10TMF085
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, FQD13N10
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, FQD13N10L
, MTD3055V
, FQD16N25C
.
