All MOSFET. NDS9952A Datasheet

 

NDS9952A Datasheet and Replacement


   Type Designator: NDS9952A
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SO8
 

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NDS9952A Datasheet (PDF)

 ..1. Size:234K  fairchild semi
 nds9952a.pdf pdf_icon

NDS9952A

February 1996 NDS9952ADual N & P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese dual N- and P-channel enhancement mode powerN-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild'sP-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. Thisvery high de

 8.1. Size:209K  fairchild semi
 nds9956a.pdf pdf_icon

NDS9952A

February 1996 NDS9956ADual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese N-Channel enhancement mode power field effect3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, highHigh density cell design for extremely low RDS(ON).cell density, DMOS technology. This very high densityprocess is especia

 8.2. Size:210K  fairchild semi
 nds9953a.pdf pdf_icon

NDS9952A

February 1996 NDS9953ADual P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThese P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V.transistors are produced using Fairchild's proprietary, highHigh density cell design for extremely low RDS(ON).cell density, DMOS technology. This very high densityprocess is espe

 8.3. Size:208K  fairchild semi
 nds9959.pdf pdf_icon

NDS9952A

February 1996 NDS9959Dual N-Channel Enhancement Mode Field Effect Transistor General Description FeaturesThese N-Channel enhancement mode power field effect2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10Vtransistors are produced using Fairchild's proprietary, high celldensity, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON).especially

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Datasheet: FQD10N20L , FDPF041N06BL1 , FQD11P06 , FQD12N20 , FQP13N50C , FQD12N20L , FQD5N50C , FQD12N20LTMF085 , AON7410 , FQD12P10TMF085 , FQD13N06 , FQD13N06L , FQD13N10 , NDS8434 , FQD13N10L , MTD3055V , FQD16N25C .

History: SWD4N70K | JMSL0402AK | DG4N60 | MIC94052BC6TR | HNM7002E | LSGN04R025 | 2SK844

Keywords - NDS9952A MOSFET datasheet

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