NDS9952A PDF and Equivalents Search

 

NDS9952A Specs and Replacement

Type Designator: NDS9952A

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SO8

NDS9952A substitution

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NDS9952A datasheet

 ..1. Size:234K  fairchild semi
 nds9952a.pdf pdf_icon

NDS9952A

February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power N-Channel 3.7A, 30V, RDS(ON)=0.08 @ VGS=10V. field effect transistors are produced using Fairchild's P-Channel -2.9A, -30V, RDS(ON)=0.13 @ VGS=-10V. proprietary, high cell density, DMOS technology. This very high de... See More ⇒

 8.1. Size:209K  fairchild semi
 nds9956a.pdf pdf_icon

NDS9952A

February 1996 NDS9956A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 3.7A, 30V. RDS(ON) = 0.08 @ VGS = 10V transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is especia... See More ⇒

 8.2. Size:210K  fairchild semi
 nds9953a.pdf pdf_icon

NDS9952A

February 1996 NDS9953A Dual P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect -2.9A, -30V. RDS(ON) = 0.13 @ VGS = -10V. transistors are produced using Fairchild's proprietary, high High density cell design for extremely low RDS(ON). cell density, DMOS technology. This very high density process is espe... See More ⇒

 8.3. Size:208K  fairchild semi
 nds9959.pdf pdf_icon

NDS9952A

February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. RDS(ON) = 0.3 @ VGS = 10V transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low RDS(ON). especially... See More ⇒

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Detailed specifications: FQD10N20L, FDPF041N06BL1, FQD11P06, FQD12N20, FQP13N50C, FQD12N20L, FQD5N50C, FQD12N20LTMF085, AON7410, FQD12P10TMF085, FQD13N06, FQD13N06L, FQD13N10, NDS8434, FQD13N10L, MTD3055V, FQD16N25C

Keywords - NDS9952A MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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